Semiconductor devices and methods of manufacture thereof
OwnerShrinivas Govindarajaninventor
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Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of fabricating a semiconductor device includes providing a workpiece, and forming a dielectric layer over the workpiece. The dielectric layer comprises a crystalline phase. The method includes forming an electrode material over the dielectric layer.
Claims30
A method of fabricating a semiconductor device, the method comprising:
- providing a workpiece;
- forming a dielectric layer over the workpiece, the dielectric layer comprising a crystalline phase;
- and
- forming an electrode material over the dielectric layer.
A method of fabricating a semiconductor device, the method comprising:
- providing a workpiece;
- cleaning the workpiece;
- forming a nitride interface layer over the workpiece;
- forming a dielectric layer over the nitride interface layer;
- annealing the workpiece in a nitrogen ambient;
- forming an electrode material over the dielectric layer;
- and
- annealing the workpiece at a temperature sufficient to crystallize the dielectric layer.
A method of fabricating a semiconductor device, the method comprising:
- providing a workpiece;
- forming a dielectric layer over the workpiece, wherein forming the dielectric layer comprises in-situ nitridation of a dielectric material and/or forming a dielectric material having a crystalline phase;
- and
- forming an electrode material over the dielectric layer, the electrode material including a first material layer and at least one second material layer disposed over the first material layer, wherein the at least one second material layer is different than the first material layer.
A method of fabricating a semiconductor device, the method comprising:
- providing a workpiece;
- cleaning the workpiece;
- forming a nitride interface layer over the workpiece;
- forming a dielectric layer over the nitride interface layer;
- annealing the workpiece;
- and
- forming an electrode material over the dielectric layer, wherein forming the electrode material comprises forming a first conductive material over the dielectric layer, and forming a second conductive material over the first conductive material, wherein forming the second conductive material comprises forming a gettering material.
A method of fabricating a semiconductor device, the method comprising:
- providing a workpiece;
- cleaning the workpiece;
- forming a nitride interface layer over the workpiece;
- forming a dielectric layer over the workpiece;
- annealing the workpiece;
- and
- forming an electrode material over the dielectric layer, wherein forming the electrode material comprises forming a first conductive material over the dielectric layer, and forming a second conductive material over the first conductive material, wherein the second conductive material is different than the first material.
Dependencies are inferred from the claim text.