Process for chemical vapor deposition of materials with via filling capability and structure formed thereby

A method of chemical vapor deposition of a material comprising Ge and Sb with via filling capability comprising:

• positioning an interconnect structure having at least line/via structure therein in a chemical vapor deposition reactor chamber, said at least one line/via structure having an aspect ratio of greater than 3:1;
• evacuating said reactor chamber including said interconnect structure to a base pressure of less than 1E-3 torr;
• heating the interconnect structure to a temperature that is less than 400° C.;
• providing an antimony-containing precursor and a germanium-containing precursor to said reactor chamber;
• and
• depositing a material comprising germanium (Ge) and antimony (Sb) into said at least one line/via structure of said interconnect structure from said precursors.