Patterned silicon submicron tubes
AssigneeSharp Laboratories of America, Inc.
InventorsTingkai Li, Jong-Jan Lee, Jer-Shen Maa, Sheng Teng Hsu
Life of this patent
Estimating the term…
Abstract
An array of submicron silicon (Si) tubes is provided with a method for patterning submicron Si tubes. The method provides a Si substrate, and forms a silicon dioxide film overlying the Si substrate. An array of silicon dioxide rods is formed from the silicon dioxide film, and Si3N4 tubes are formed surrounding the silicon dioxide rods. The silicon dioxide rods are etched away. Then, exposed regions of the Si substrate are etched, forming Si tubes underlying the Si3N4 tubes. Finally, the Si3N4 tubes are removed.
Claims22
A method for patterning submicron silicon (Si) tubes, the method comprising:
- providing a Si substrate;
- forming a silicon dioxide film overlying the Si substrate;
- forming an array of silicon dioxide rods;
- forming Si3N4 tubes surrounding the silicon dioxide rods;
- etching the silicon dioxide rods;
- etching exposed regions of the Si substrate, forming Si tubes underlying the Si3N4 tubes;
- and,
- removing the Si3N4 tubes.
An array of submicron silicon (Si) tubes, the array comprising:
- a Si substrate;
- Si tubes overlying the Si substrate, having an inside diameter in a range of about 50 to 800 nanometers (nm), a thickness in a range of about 10 to 300 nm, and a height in a range of about 0.1 to 3 microns.
Dependencies are inferred from the claim text.