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US 2008/0164574 A1Published application
Integrated circuits with conductive features in through holes passing through other conductive features and through a semiconductor substrate
OwnerSergey Savastiouk, Valentin Kosenko +1inventors
InventorsSergey Savastiouk, Valentin Kosenko, James J. Roman
Life of this patent
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Abstract
A backside contact pad is formed in an integrated circuit, possibly designed initially with just top side contact pads (150C), by forming an opening (220) through a top side contact pad (150C) and the semiconductor substrate (110). Conductive material (520, 540, 1110, 1130) is formed in the opening and in contact with the top side pad. The conductive material also provides a backside contact pad (1310). Other embodiments are also provided.
Claims6
An integrated circuit comprising:
- a semiconductor substrate;
- one or more first conductive features overlying the semiconductor substrate;
- one or more through-holes passing through the one or more first conductive features and the semiconductor substrate, wherein each first conductive feature has an edge at a sidewall of one of said one or more through-holes;
- one or more second conductive features, each second conductive feature at least partially located in one of said through-holes and contacting a first conductive feature having an edge at the sidewall of said one of said one or more through-holes, each second conductive feature providing an electrical contact for contacting the integrated circuit at a bottom of the integrated circuit.
1 more element
An integrated circuit comprising:
- a semiconductor substrate;
- one or more first conductive features overlying the semiconductor substrate;
- one or more through-holes passing through the one or more first conductive features and the semiconductor substrate, wherein each said through-hole is laterally surrounded by one of said one or more first conductive features;
- one or more second conductive features, each second conductive feature at least partially located in one of said through-holes and contacting a first conductive feature laterally surrounding said one of said through-holes.
1 more element
Dependencies are inferred from the claim text.