Methods for fabricating silicon carriers with conductive through-vias with low stress and low defect density

A semiconductor device, comprising:

• a silicon carrier substrate comprising a planar bulk substrate having a thickness t between first and second surfaces of the bulk semiconductor substrate, and an array of conductive through-vias formed through the bulk semiconductor substrate between the first and second surfaces of the bulk substrate,
• wherein the conductive through-vias have inner conductor cores that are seam-free, and
• wherein the conductive through-vias have aspect ratios (via height to diameter) of less than about 8:1 where the conductive through-via structures have a width or diameter of about 0.5 microns to about 10 microns and a height of about 10 microns or less.

A semiconductor device, comprising:

• a silicon carrier substrate comprising a planar bulk substrate having a thickness t between first and second surfaces of the bulk semiconductor substrate, and an array of conductive through-vias formed through the bulk semiconductor substrate between the first and second surfaces of the bulk substrate,
• wherein the conductive through-vias have inner conductor cores that are seam-free, and
• wherein the conductive through-vias have aspect ratios of about 30:1 or greater where the conductive through-via structures have a width or diameter of about 0.5 microns to about 10 microns and a height of about 300 microns or greater.