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AssigneeCovalent Materials Corporation
InventorsEiji Toyoda, Takeshi Senda, Akiko Narita, Hiromichi Isogai, Koji Izunome
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A semiconductor substrate whose surface roughness is reduced by optimizing an inclination (off angle) with respect to a {110} surface of the semiconductor substrate surface and a manufacturing method thereof are provided. The surface of the semiconductor substrate has the inclination (off angle) of 0 degree or more and 0.12 degrees or less, or 5 degrees or more and 11 degrees or less, preferably 6 degrees or more and 9 degrees or less with respect to the {110} surface. The manufacturing method of a semiconductor substrate has a process in which a semiconductor single crystal ingot is sliced at an inclination (off angle) of 5 degrees or more and 11 degrees or less, preferably 6 degrees or more and 9 degrees or less with respect to the {110} surface.
A semiconductor substrate, wherein a surface of the semiconductor substrate has an inclination (off angle) of 0 degree or more and 0.12 degrees or less, or 5 degrees or more and 11 degrees or less with respect to a {110} surface.
A method of manufacturing a semiconductor substrate, wherein a semiconductor single crystal ingot is sliced at an inclination (off angle) of 0 degree or more and 0.12 degrees or less, or 5 degrees or more and 11 degrees or less with respect to a {110} surface.
A semiconductor substrate formed by a first semiconductor wafer and a second semiconductor wafer being directly bonded, comprising:
A method of manufacturing a semiconductor substrate by bonding a first semiconductor wafer and a second semiconductor wafer;
Dependencies are inferred from the claim text.