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AssigneeArizona Board of Regents, acting for and on behalf of Arizona State University
InventorsJohn Kouvetakis, Radek Roucka
Estimating the term…
Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.
A semiconductor structure comprising a substrate and an epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B and one or more element selected from the group consisting of Zr, Hf and Al;
A method for forming an epitaxial buffer layer over a substrate comprising,
A method for integrating Group III nitrides onto a substrate comprising,
A method for tuning the reflectivity of a buffer layer comprising,
A method for tuning the lattice constant of a buffer layer comprising, forming a buffer layer of an alloy of the formula HfxZr1−xB2 having a thickness greater than about 50 nm, and forming an active layer over the buffer layer, wherein x is a predetermined value from 0 to 1, and wherein the active layer is lattice matched to the buffer layer,
Dependencies are inferred from the claim text.