Terbium-doped, silicon-rich oxide electroluminescent devices and method of making the same

A method of fabricating an electroluminescent device comprising:

• preparing a substrate;
• forming a gate oxide layer on the substrate;
• depositing a rare earth-doped silicon-rich layer, taken from the group of rare earth silicon-rich layers consisting of silicon-rich silicon oxide and silicon-rich silicon nitride, on the gate layer as a light emitting layer;
• depositing a control oxide layer on the rare earth-doped silicon-rich silicon oxide layer;
• depositing a top electrode on the control oxide layer;
• patterning and etching the top electrode, the control oxide layer, the rare earth-doped silicon-rich silicon oxide layer, and the gate layer;
• annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich silicon oxide layer;
• and
• incorporating the electroluminescent device into a CMOS IC.