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US 2008/0164568 A1Published application
Resistance random access memory and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMyoung-jae Lee, Eun-hong Lee, Young-soo Park
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Abstract
Provided are a resistance random access memory including a resistance layer having a metal oxide and/or a metal ion dopant, which may be deposited at room temperature and which may have variable resistance characteristics, and a method of manufacturing the same.
Claims19
A resistance random access memory comprising:
- a lower electrode;
- a resistance layer having a metal oxide and a metal ion dopant on the lower electrode;
- and
- an upper electrode on the resistance layer.
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A method of manufacturing a resistance random access memory, the method comprising:
- forming a lower electrode;
- forming a resistance layer having a metal oxide and a metal ion dopant on the lower electrode;
- and
- forming an upper electrode on the resistance layer.
1 more element
Dependencies are inferred from the claim text.