Semiconductor device
AssigneesSanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd.
InventorsShuichi Kikuchi, Shigeaki Okawa, Kiyofumi Nakaya, Shuji Tanaka
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Abstract
There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers formed in an N-type epitaxial layer, N-type cathode diffusion layers formed in the epitaxial layer, a P-type third anode diffusion layer formed in the epitaxial layer so as to surround the first and second anode diffusion layers and to extend toward the cathode diffusion layers, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.
Claims9
A semiconductor device comprising:
- a semiconductor layer of a first general conductivity type;
- a first anode diffusion layer of a second general conductivity type formed in the semiconductor layer;
- a second anode diffusion layer of the second general conductivity type formed in the semiconductor layer and separated from the first diffusion layer;
- a third anode diffusion layer of the second general conductivity type formed in the semiconductor layer so that the first and second anode diffusion layers are confined within a lateral area of the third anode diffusion layer;
- a cathode diffusion layer of the first general conductivity type formed in the semiconductor layer and not being disposed in the lateral area of the third anode diffusion layer;
- and
- a Schottky barrier metal layer disposed on the first, second and third anode diffusion layers.
Dependencies are inferred from the claim text.