Cmos image sensor

Abstract

Embodiments relate to a CMOS image sensor and to a method for manufacturing a CMOS image sensor that may disperse stray beam between microlenses. According to embodiments, the method for manufacturing the CMOS image may include forming an interlayer dielectric layer on a semiconductor substrate including a plurality of photo diodes, forming a color filter layer corresponding to the photo diodes on the interlayer dielectric layer, forming a planarization layer on the color filter layer, forming microlenses on the planarization layer after depositing an insulating layer over the microlenses, forming a trench in a concave lens shape in the insulating layer between the microlenses, and forming a concave lens gap-filling insulating materials inside the trench. In embodiments, concave lenses may be formed between microlenses in a CMOS image sensor and stray beams between the microlenses may be dispersed and recondensed into the microlenses.

Dependencies are inferred from the claim text.