Transistors and Methods of Manufacture Thereof
AssigneeInfineon Technologies AG
InventorsHongfa Luan, Prashant Majhi
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Abstract
Transistors and methods of manufacture thereof are disclosed. A workpiece is provided, a gate dielectric is formed over the workpiece, and a gate is formed over the gate dielectric by exposing the workpiece to a precursor of hafnium (Hf) and a precursor of silicon (Si). The gate may comprise a layer of a combination of Hf and Si. The layer of the combination of Hf and Si of the gate establishes the threshold voltage Vt of the transistor. The transistor may comprise a single NMOS transistor or an NMOS transistor of a CMOS device.
Claims20
A transistor, comprising:
- a gate comprising a layer of a combination of hafnium (Hf) and silicon (Si), the gate comprising a first thickness, wherein the ratio of the amount of Hf and the amount of Si are substantially the same through the entire first thickness of the gate.
A complementary metal oxide semiconductor (CMOS) device, comprising:
- a negative channel metal oxide semiconductor (NMOS) transistor, including a first gate comprising a layer of a combination of hafnium (Hf) and silicon (Si), the first gate comprising a first thickness, wherein the amount of Hf and the amount of Si are substantially the same through the entire first thickness of the first gate;
- and
- a positive channel metal oxide semiconductor (PMOS) transistor including a second gate comprised of a different material than the first gate of the NMOS transistor.
Dependencies are inferred from the claim text.