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US 2008/0164533 A1Published application
Method of manufacturing a germanosilicide and a semiconductor device having the germanosilicide
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-Deok Yang, Chang-wook Moon, Joong S. Jeon
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Abstract
Example embodiments relate to a method of manufacturing a germanosilicide and a semiconductor device having the germanosilicide. A method according to example embodiments may include providing a substrate having at least a portion formed of silicon germanium. A metal layer may be formed on the silicon germanium. A thermal process may be performed on the substrate at a relatively high pressure to form the germanosilicide.
Claims21
A method of manufacturing a germanosilicide, comprising:
- providing a substrate having at least a portion formed of silicon germanium;
- forming a metal layer on the silicon germanium;
- and
- performing a thermal process on the substrate at a high pressure to form the germanosilicide.
1 more element
A semiconductor device comprising:
- a substrate having a source region and a drain region;
- a gate dielectric provided on the substrate;
- a gate electrode provided on the gate dielectric;
- and
- a germanosilicide provided on the source and drain regions,
- wherein the germanosilicide is formed by preparing the substrate such that at least a portion thereof is formed of silicon germanium;
- forming a metal layer on the silicon germanium;
- and performing a thermal process on the substrate at a high pressure to form the germanosilicide.
5 more elements
Dependencies are inferred from the claim text.