US 2008/0164529 A1 · SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Abstract

A semiconductor device having dual fully-silicided gate is provided, which includes a first transistor, a second transistor, a dielectric layer, and an interlayer insulating layer. The first transistor is disposed on the substrate, which includes a first silicided gate and a first source/drain. The second transistor is disposed on the substrate, which includes a second silicided gate and a second source/drain. The material of the first silicided gate is different from the material of the second silicided gate. The first silicided gate and the second silicided gate are formed in one silicidation process. The dielectric layer completely covers the first transistor and the second transistor. The interlayer insulating layer is disposed on the dielectric layer.

Claims74

Dependent claims

A semiconductor device having a dual fully-silicided gate, comprising:

a first transistor disposed on a substrate, having a first silicided gate and a first source/drain;
and
a second transistor disposed on the substrate, having a second silicided gate and a second source/drain, wherein a material of the first silicided gate is different from that of the second silicided gate, and the first silicided gate and the second silicided gate are formed in one silicidation process.

A method of manufacturing the semiconductor device having a dual fully-silicided gate, comprising:

providing a substrate having a first transistor and a second transistor formed thereon, the first transistor comprising a first gate, a first cap layer, and a first source/drain, the second transistor comprising a second gate, a second cap layer and a second source/drain, wherein the gate height of the first gate is different from the second gate;
and
performing a first silicidation process to form a silicided layer on the first source/drain and the second source/drain;
removing the first cap layer and the second cap layer;
and
performing a second silicidation process to respectively transform the first gate and the second gate into a first silicided gate and a second silicided gate simultaneously, wherein the material of the first silicided gate is different from that of the second silicided gate.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device and manufacturing method thereof

Life of this patent

Semiconductor device and manufacturing method thereof

Life of this patent

Abstract

Claims74