Semiconductor device and method of manufacturing the same
OwnerTakashi Kataoka, Atsuko Yamashita +1inventors
InventorsTakashi Kataoka, Atsuko Yamashita, Yoshiharu Kouji
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Abstract
The semiconductor comprises a channel layer including GaN, a barrier layer formed by laminating a first layer including AlXGa1-XN (0.05≦X≦0.25) and a second layer including AlYGa1-YN (0.20≦Y≦0.28, X<Y), source and drain electrodes provided spaced apart from each other on the barrier layer, and a gate electrode provided on the bottom of a ditch extending between the source and drain electrodes and formed with a depth starting from the top surface of the barrier layer reaching the first layer adjacent to the channel layer.
Claims16
A semiconductor device comprising,
- a channel layer including GaN,
- a barrier layer formed on the channel layer, the barrier layer being formed by laminating a first layer including AlXGa1-XN (0.05≦X≦0.25) and a second layer including AlYGa1-YN (0.20≦Y≦0.28, X<Y) in order,
- source and drain electrodes provided spaced apart from each other on the barrier layer, and
- a gate electrode provided on the bottom of a ditch extending between the source and drain electrodes and formed with a depth starting from the top surface of the barrier layer reaching the first layer adjacent to the channel layer.
A method of manufacturing a semiconductor device, comprising:
- providing a channel layer including GaN;
- forming barrier layer on the channel layer by laminating a first layer including AlXGa1-XN (0.05≦X≦0.25) and a second layer including AlYGa1-YN (0.20≦Y≦0.28, X<Y) in order;
- forming a ditch in the barrier layer with a depth starting from the top surface of the barrier layer reaching the first layer adjacent to the channel layer;
- forming a gate electrode in the ditch in the barrier layer.
Dependencies are inferred from the claim text.