Process for high voltage superjunction termination
AssigneeThird Dimension (3D) Semiconductor, Inc.
InventorsFwu-Iuan Hshieh, Brian D. Pratt
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.
Claims4
A method of manufacturing a semiconductor device having an active region and a termination region surrounding the active region, the method comprising:
- providing a semiconductor substrate having first and second main surfaces opposite to each other, the semiconductor substrate having a heavily doped region of a first conductivity type at the second main surface;
- providing an oxide substrate having first and second main surfaces opposite to each other;
- bonding/annealing the second main surface of the oxide substrate to the first main surface of the semiconductor substrate;
- forming a trench in the oxide substrate proximate the active region, the trench extending from the first main surface of the oxide substrate to the first main surface of the semiconductor substrate;
- and
- filling the trench with an epitaxial layer.
Dependencies are inferred from the claim text.