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US 2008/0164515 A1Published application
High-density power MOSFET with planarized metalization
AssigneeVishay-Siliconix
InventorJian Li
Life of this patent
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Abstract
A method for producing a power MOSFET. The method includes fabricating a plurality of layers of a power MOSFET to produce an upper surface active area and performing a chemical mechanical polishing process on the active area to produce a substantially planar surface. A metalization deposition process is then performed on the substantially planar surface and the fabrication of the power MOSFET is subsequently completed.
Claims19
A method for producing a power MOSFET, comprising:
- fabricating a plurality of layers of a power MOSFET to produce an upper surface active area;
- performing a chemical mechanical polishing process on the active area to produce a substantially planar surface;
- performing a metalization deposition process on the substantially planar surface;
- and
- completing fabrication of the power MOSFET.
2 more elements
An apparatus, comprising:
- a high density power MOSFET having a plurality of layers that produce an upper surface active area, wherein the active area is planerized from a chemical mechanical polishing process to a substantially planar surface, the active area having a metalization layer deposited thereon.
A method for producing a high density power MOSFET, comprising:
- fabricating a plurality of layers of a power MOSFET to produce an upper surface active area;
- performing a chemical mechanical polishing process on the active area to produce a substantially planar surface;
- performing a metalization deposition process on the substantially planar surface, wherein the metalization deposition is configured to deposit a metal layer less than 4 microns deep;
- and
- completing fabrication of the power MOSFET.
2 more elements
Dependencies are inferred from the claim text.