Non-volatile semiconductor memory device and a method of fabricating a non-volatile semiconductor memory device
AssigneeMacronix International Co., Ltd.
InventorsYen-Hao Shih, Ming-Hsiang Hsueh, Erh-Kun Lal, Chia-Wei Wu, Chi-Pin Lu, Jung-Yu Hsieh
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Abstract
The present invention relates to a memory device and a method of fabricating the same. The memory device comprises a substrate, a tunnel dielectric film on the substrate, pairs of source and drain regions formed in the substrate, and a number of separate storage blocks between each pair of the source and drain regions. Each storage wire block includes a storage medium and a silicon dioxide layer. Two storage blocks are separated by an interval of at least 100 angstroms.
Claims21
A method of fabricating a memory device, comprising:
- providing a substrate;
- providing a tunnel dielectric film on the substrate;
- providing a charge storage stack over the tunnel dielectric film, wherein the charge storage stack includes a storage medium layer and a thin silicon layer overlaying the storage medium layer;
- providing a second dielectric layer on the charge storage stack;
- forming pairs of source and drain regions under the tunnel dielectric film;
- and
- forming a number of storage blocks between each pair of source and drain regions by separating the charge storage stack using a photoresistless etching process.
A method of fabricating a memory device, comprising:
- providing a substrate;
- providing a tunnel oxide film on the substrate;
- providing a charge storage stack over the tunnel oxide film, wherein the charge storage stack includes a storage medium layer and a thin silicon layer;
- providing a nitride layer on the charge storage stack;
- forming source and drain regions under the tunnel oxide film;
- forming a number of storage blocks by separating the charge storage stack using a photoresistless etching process;
- providing one of a blocking oxide film and an interpoly dielectric layer on the separate storage blocks and the tunnel oxide film;
- overlaying a gate material;
- and
- forming a gate structure by photolithography and reactive ion etching.
A memory cell, comprising:
- a substrate;
- a tunnel dielectric film on the substrate;
- pairs of source and drain regions formed in the substrate;
- and
- a number of separate storage blocks between each pair of source and drain regions, each storage block including a storage medium layer and a silicon dioxide layer,
- wherein two storage blocks are separated by an interval of at least 100 angstroms.
Dependencies are inferred from the claim text.