Phase change memory device and method for fabricating the same

A method of fabricating a phase change memory device, comprising:

• providing a substrate with an electrode layer formed thereon;
• forming a phase change memory structure on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises:
• forming a cup-shaped heating electrode on the electrode layer;
• forming an insulating layer on the cup-shaped heating electrode along a first direction and covering a portion of the cup-shaped heating electrode;
• forming an electrode structure along a second direction and covering a portion of the insulating layer and the cup-shaped heating electrode;
• and
• forming a pair of double spacers on a pair of sidewalls of the electrode structure and covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer placed on a sidewall of the phase change material spacer.

A phase change memory device, comprising:

• a substrate;
• an electrode layer formed on the substrate;
• a dielectric layer formed on the electrode layer;
• a phase change memory structure formed in the dielectric layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises:
• a cup-shaped heating electrode placed in a cup-shaped opening in the dielectric layer, wherein the cup-shaped heating electrode comprises a conductive layer covering a portion of a sidewall of the cup-shaped heating electrode;
• an electrode structure placed on the cup-shaped heating electrode and covering a portion of the cup-shaped heating electrode;
• a pair of double spacers placed on a pair of sidewalls of the electrode structure and covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer placed on a sidewall of the phase change material spacer.

A method of fabricating a phase change memory device, comprising:

• providing a substrate with an electrode layer formed thereon;
• forming a dielectric layer on the electrode layer;
• forming a phase change memory structure in the dielectric layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises:
• forming a cup-shaped heating electrode in a cup-shaped opening in the dielectric layer, wherein the cup-shaped heating electrode comprises a conductive layer covering a portion of a sidewall of the cup-shaped heating electrode;
• forming an electrode structure on the cup-shaped heating electrode covering a portion of the cup-shaped heating electrode;
• and
• forming a pair of double spacers on a pair of sidewalls of the electrode structure and covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer placed on a sidewall of the phase change material spacer.