Ferroelectric Memory Devices Having a Protruding Bottom Electrode and Methods of Forming the Same
AssigneeSamsung Electronics Co., Ltd.
InventorsSuk-Hun Choi, Chang-Ki Hong, Jung-Hyeon Kim, Jun-Young Lee, Jong-Heun Lim, Seong-Kyu Yun
Life of this patent
Estimating the term…
Abstract
A ferroelectric memory device and methods of forming the same are provided. Forming a ferroelectric device includes forming an insulation layer over a substrate having a conductive region, forming a bottom electrode electrically connected to the conductive region in the insulation layer, recessing the insulation layer, and forming a ferroelectric layer and an upper electrode layer covering the bottom electrode over the recessed insulation layer, The bottom electrode protrudes over an upper surface of the recessed insulation layer.
Claims20
A method of forming a ferroelectric memory device, comprising:
- forming an insulation layer on a substrate having a conductive region;
- forming a bottom electrode electrically connected to the conductive region in the insulation layer;
- recessing the insulation layer;
- and
- forming a ferroelectric layer and an upper electrode layer covering the bottom electrode on the recessed insulation layer;
- wherein the bottom electrode protrudes over an upper surface of the recessed insulation layer.
A ferroelectric memory device comprising:
- a substrate having a conductive region;
- an insulation layer on the substrate;
- a bottom electrode that is electrically connected to the conductive region and protrudes over the insulation layer, the bottom electrode having a bottom surface that is lower than an upper surface of the insulation layer;
- and
- a ferroelectric layer and an upper electrode that cover an upper surface and sidewalls of the bottom electrode.
Dependencies are inferred from the claim text.