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US 2008/0164501 A1Published application
Image sensor pixel having photodiode with multi-dopant implantation
AssigneeOmniVision Technologies, Inc.
InventorHoward E. Rhodes
Life of this patent
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Abstract
An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. The N− region is formed from an implant of arsenic and an implant of phosphorus. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the floating node. Finally, the pixel includes an amplification transistor controlled by the floating node.
Claims16
A pixel comprising:
- a photodiode formed in a semiconductor substrate, said photodiode being an P-region formed within a N-type region, said P− region being formed from an implant of a first type of P type dopant and an implant of a second type of P type dopant, wherein said first type of P type dopant has a different diffusivity than said second type of P type dopant, wherein said first P type dopant is boron and said second P type dopant is indium and wherein said second P type dopant is substantially surrounded by said first P type dopant.
A pixel comprising:
- a photodiode formed in a semiconductor substrate, said photodiode being an P-region formed within a N-type region, said P− region being formed from an implant of a first type of P type dopant and an implant of a second type of P type dopant, wherein said first type of P type dopant has a different diffusivity than said second type of P type dopant, wherein said first P type dopant is boron and said second P type dopant is indium and wherein said second P type dopant is substantially surrounded by said first P type dopant;
- and
- an N+ pinning layer formed on the surface of said semiconductor substrate and above said P− region.
Dependencies are inferred from the claim text.