Solid-state image sensing device and camera system using the same

A solid-state image sensing device having a plurality of pixels, each pixel comprising:

• a photodiode that is constituted by a semiconductor region having a first conductivity type and a semiconductor region having a second conductivity type to generate signal charge, the first conductivity type and the second conductivity type being opposite to each other;
• a first transistor that has a drain region formed in the second-conductivity-type semiconductor region to transfer the signal charge to the drain region, the drain region having the first conductivity type;
• a second transistor that has a source region and a drain region which are formed in the second-conductivity-type semiconductor region, the source and drain regions having the first conductivity type,
• wherein at least one potential barrier having the second conductivity type is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.