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US 2008/0164498 A1Published application
Forming a semiconductor device having a metal electrode and structure thereof
AssigneeFreescale Semiconductor, Inc.
InventorWilliam J. Taylor
Life of this patent
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Abstract
A method for forming a semiconductor device includes forming a gate dielectric over a substrate, forming a metal electrode over the gate dielectric, forming a first sacrificial layer which includes polysilicon or a metal over the metal electrode, removing the first sacrificial layer, and forming a gate electrode contact over and coupled to the metal electrode.
Claims20
A method for forming a semiconductor device comprising:
- forming a gate dielectric over a substrate;
- forming a metal electrode over the gate dielectric;
- forming a first sacrificial layer over the metal electrode, wherein the first sacrificial layer comprises a material selected from a group consisting of polysilicon and a metal;
- removing the first sacrificial layer;
- and
- forming a gate electrode contact over and coupled to the metal electrode.
3 more elements
A method for forming a semiconductor device comprising:
- forming a gate dielectric over a substrate;
- forming a metal electrode over the gate dielectric;
- forming a first sacrificial layer over the metal electrode, the first sacrificial layer comprising polysilicon;
- forming a second sacrificial layer over the first sacrificial layer;
- forming a spacer adjacent the metal electrode, the first sacrificial layer, and the second sacrificial layer;
- removing the second sacrificial layer;
- removing the first sacrificial layer;
- and
- forming a gate electrode contact over and coupled to the metal electrode.
6 more elements
A semiconductor device comprising:
- a gate dielectric over a substrate;
- a gate electrode over the gate dielectric;
- a gate electrode contact over and coupled to the metal electrode;
- and
- a spacer adjacent the metal electrode, wherein the spacer has a height that is at least twice a combined height of the metal gate electrode and the gate dielectric.
2 more elements
Dependencies are inferred from the claim text.