Circuit having a power transistor and a drive circuit
AssigneeInfineon Technologies AG
InventorMathias von Borcke
Life of this patent
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Abstract
A circuit having a power transistor and drive circuit is disclosed. One embodiment provides a drive terminal and a load path. The power transistor is integrated in a first semiconductor body. A first sensor arrangement having a sensor transistor is integrated in the first semiconductor body. The sensor arrangement provides a first sensor signal dependent on a threshold voltage of the sensor transistor. A drive circuit to which the first sensor signal is supplied and designed to drive the power transistor via its drive terminal as a function of the first sensor signal.
Claims20
A circuit comprising:
- a power transistor with a drive terminal and with a load path, the power transistor being integrated in a first semiconductor body;
- a first sensor arrangement having a sensor transistor integrated in the first semiconductor body, the sensor arrangement providing a first sensor signal dependent on a threshold voltage of the sensor transistor;
- and
- a drive circuit to which the first sensor signal is supplied and that is configured to drive the power transistor via its drive terminal as a function of the first sensor signal.
An integrated circuit comprising:
- a power transistor with a drive terminal and with a load path, the power transistor being integrated in a first semiconductor body;
- a sensor transistor integrated in the first semiconductor body and configured to provide a first sensor signal dependent on a threshold voltage of the sensor transistor;
- and
- a drive circuit to which the first sensor signal is supplied and that is configured to drive the power transistor via its drive terminal as a function of the first sensor signal;
- wherein the power transistor and the sensor transistor are produced by substantially the same processes.
An integrated circuit comprising:
- a power transistor with a drive terminal and with a load path, the power transistor being integrated in a first semiconductor body;
- a sensor transistor integrated in the first semiconductor body and configured to provide a first sensor signal dependent on a threshold voltage of the sensor transistor;
- a drive circuit to which the first sensor signal is supplied and that is configured to drive the power transistor via its drive terminal as a function of the first sensor signal;
- and
- means integrated in the first semiconductor body for producing a second sensor signal dependent on a temperature in the first semiconductor body, the second sensor signal being supplied to and driving the drive circuit as a function of the second sensor signal.
An method of forming an integrated circuit comprising:
- integrating a power transistor with a drive terminal and with a load path into a first semiconductor body;
- integrating a sensor transistor into the first semiconductor body, the sensor transistor configured to provide a first sensor signal dependent on a threshold voltage of the sensor transistor;
- and
- forming a drive circuit to which the first sensor signal is supplied and that is configured to drive the power transistor via its drive terminal as a function of the first sensor signal;
- wherein the power transistor and the sensor transistor are produced by substantially the same processes.
Dependencies are inferred from the claim text.