Structures containing electrodeposited germanium and methods for their fabrication
AssigneeInternational Business Machines Corporation
InventorsStephen W. Bedell, Hariklia Deligianni, Qiang Huang, Lubomyr T. Romankiw, Devendra K. Sadana, Katherine L. Saenger
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Abstract
Methods for electrodepositing germanium on various semiconductor substrates such as Si, Ge, SiGe, and GaAs are provided. The electrodeposited germanium can be formed as a blanket or patterned film, and may be crystallized by solid phase epitaxy to the orientation of the underlying semiconductor substrate by subsequent annealing. These plated germanium layers may be used as the channel regions of high-mobility channel field effect transistors (FETs) in complementary metal oxide semiconductor (CMOS) circuits.
Claims21
A semiconductor structure comprising a semiconductor substrate and regions of electroplated germanium on said semiconductor substrate.
A method for electrodepositing germanium on exposed regions of a semiconductor substrate, said method comprising:
- obtaining a semiconductor substrate having cleaned exposed regions;
- immersing said exposed regions in an organic electrolyte solution containing a germanium-containing salt dissolved in an organic solvent;
- electrodepositing germanium from the electrolyte solution onto said exposed regions to thereby form regions of electrodeposited germanium.
The method of claim 111 wherein the alkyl diol solvent is selected from the group consisting of ethylene glycol, propylene glycol, butylene glycol and pentylene glycol.
Dependencies are inferred from the claim text.