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US 2008/0164489 A1Published application
Metalorganic chemical vapor deposittion (MOCVD) growth of high performance non-polar III-nitride optical devices
AssigneesThe Regents of the University of California, Japan Science and Technology Agency
InventorsMathew C. Schmidt, Kwang Choong Kim, Hitoshi Sato, Steven P. DenBaars, James S. Speck, Shuji Nakamura
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Abstract
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
Claims21
A method for fabricating an optoelectronic device, comprising:
- (a) growing an n-type III-nitride layer on a low defect non-polar III-nitride substrate or template;
- (b) growing an active region including a quantum well structure on the n-type III-nitride layer;
- and
- (c) growing a low temperature p-type III-nitride layer on the active region.
1 more element
An optoelectronic device, comprising:
- (a) an n-type III-nitride layer grown on a low defect non-polar III-nitride substrate or template;
- (b) an active region including a quantum well structure grown on the n-type III-nitride layer;
- and
- (c) a low temperature p-type III-nitride layer grown on the active region.
1 more element
Dependencies are inferred from the claim text.