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US 2008/0164486 A1Published application
Semiconductor light emitting device including GaAs substrate and method for manufacturing the same
AssigneeRohm Co., Ltd.
InventorsTadahiro Hosomi, Kentaro Mineshita
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Abstract
A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 μm.
Claims9
A semiconductor light emitting device comprising:
- a substrate made of GaAs;
- and
- a semiconductor layer formed on the substrate, wherein
- part of the substrate on a side opposite to the semiconductor layer is removed by etching to allow the semiconductor light emitting device to have a thickness of not more than 60 μm.
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A method for manufacturing a semiconductor light emitting device, the method comprising:
- a growing step of growing a semiconductor layer on a substrate made of GaAs;
- a attachment step of attaching a temporary supporting substrate to a surface of the semiconductor layer opposite to the substrate with an adhesive made of polyimide system resin;
- and
- an etching step of removing part of the substrate on a side opposite to the semiconductor layer by etching to allow the semiconductor light emitting device to have a thickness of not more than 60 μm in a stacking direction.
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Dependencies are inferred from the claim text.