Fabrication of Semiconductor Devices
AssigneeTinggi Technologies Private Limited
InventorsXuejun Kang, Daike Wu, Edward Robert Perry, Shu Yuan
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Abstract
A method for fabrication of a semiconductor device on a substrate, the semiconductor having a wafer. The method includes the steps:(a) applying a seed layer of a thermally conductive metal to the wafer; (b) electroplating a relatively thick layer of the conductive metal on the seed layer, and(c) removing the substrate. A corresponding semiconductor device is also disclosed.
Claims50
A method for fabrication of a semiconductor device on substrate, the semiconductor device having a plurality of layers, the method including:
- (a) applying a seed layer of a thermally conductive metal to a first surface of the semiconductor device;
- (b) electroplating a relatively thick layer of the thermally conductive metal on the seed layer, the thermally conductive metal of sufficient thickness to provide a heat sink;
- and
- (c) removing the substrate.
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A semiconductor device comprising epitaxial layers, first ohmic contact layers on a first surface of the epitaxial layers, a relatively thick layer of a thermally conductive metal on the first ohmic contact layer to form a heat sink, and a second ohmic contact layer on a second surface of the epitaxial layers, an adhesive layer on the first ohmic contact layer between the first ohmic contact layer and the relatively thick layer, the relatively thick layer being applied by electroplating.
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A semiconductor device comprising epitaxial layers, a first ohmic contact layer on a first surface of the epitaxial layers, an adhesive layer on the first ohmic contact layer, and a seed layer of a thermally conductive metal on the adhesive layer.
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A method of fabrication of a semiconductor device, the method including:
- (a) on a substrate with a plurality of epitaxial layers comprising multiple GaN-related epitaxial layers, forming a first ohmic contact layer on a first surface of the epitaxial layers;
- (b) removing the substrate from the epitaxial layers;
- and
- (c) forming a second ohmic contact layer on a second surface of the epitaxial layers, the second ohmic contact layer having bonding pads formed thereon.
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A method for fabrication of a semiconductor device on a substrate, the semiconductor device having a plurality of layers with a device layer, the method including:
- (a) electroplating a layer of a thermally conductive material onto a surface of the semiconductor device remote from the substrate and close to the device layer;
- and
- (b) removing the substrate.
A method for fabrication of a light emitting device on a substrate, the light emitting device having a plurality of layers with an active layer, the method including:
- (a) electroplating a layer of a thermally conductive material onto a surface of the semiconductor device remote from the substrate and close to the active layer;
- and
- (b) removing the substrate.
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Dependencies are inferred from the claim text.