Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor

A method of forming polysilicon, the method comprising the steps of:

• forming an insulating layer on a substrate;
• forming at least one amorphous material layer containing silicon on the insulating layer;
• forming a heater layer on said at least one amorphous material layer;
• forming on the insulating layer, a first electrode and a second electrode, each being connected to a respective end of the heater layer;
• forming a through-hole under said at least one amorphous material layer by etching the insulating layer;
• and
• crystallizing said at least one amorphous material layer into at least one polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer.

A method of forming polysilicon, the method comprising the steps of:

• forming an insulating layer on a substrate;
• forming, on the insulating layer, a first electrode and a second electrode, and at least one amorphous material layer containing silicon to connect the first electrode and the second electrode;
• forming a through-hole under said at least one amorphous material layer by etching the insulating layer;
• and
• crystallizing said at least one amorphous material layer into at least one polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat said at least one amorphous material layer.

A method of forming polysilicon, the method comprising the steps of:

• forming an insulating layer on a substrate;
• forming, on the insulating layer, a first electrode and a second electrode, and at least one heater layer so as to connect the first electrode and the second electrode;
• forming a through-hole under said at least one heater layer by etching the insulating layer;
• applying a voltage between the first electrode and the second electrode so as to heat said at least one heater layer;
• and
• depositing a polysilicon layer on the heated said at least one heater layer.

A thin film transistor, comprising:

• a substrate;
• a gate electrode formed on the substrate;
• an insulating layer protruding from the gate electrode;
• a source electrode and a drain electrode formed on a top surface of the protruding insulating layer;
• and
• at least one polysilicon layer formed in a bridge shape so as to connect the source electrode and the drain electrode.

A method of fabricating a thin film transistor, the method comprising the steps of:

• sequentially forming a gate electrode and an insulating layer on a substrate;
• forming a source electrode and a drain electrode on the insulating layer;
• forming at least one heater layer on the insulating layer so as to connect the source electrode and the drain electrode;
• forming an amorphous material layer containing silicon on said at least one heater layer;
• forming a through-hole under said at least one heater layer by etching the insulating layer;
• crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the source electrode and the drain electrode so as to heat said at least one heater layer;
• and
• etching and removing an exposed portion of said at least one heater layer.

A method of fabricating a thin film transistor, the method comprising the steps of:

• sequentially forming a gate electrode and an insulating layer on a substrate;
• forming at least one amorphous material layer containing silicon on the insulating layer;
• forming a heater layer on said at least one amorphous material layer;
• forming a source electrode and a drain electrode, each connected to a respective end of the heater layer on the insulating layer;
• forming a through-hole under said at least one amorphous material layer by etching the insulating layer;
• crystallizing said at least one amorphous material layer into at least one polysilicon layer by applying a voltage between the source electrode and the drain electrode so as to heat the heater layer;
• and
• etching and removing an exposed portion of the heater layer.

A method of fabricating a thin film transistor, the method comprising the steps of:

• sequentially forming a gate electrode and an insulating layer on a substrate;
• forming, on the insulating layer, a source electrode and a drain electrode, and at least one amorphous material layer containing silicon to connect the source electrode and the drain electrode;
• forming a through-hole under said at least one amorphous material layer by etching the insulating layer;
• and
• crystallizing said at least one amorphous material layer into at least one polysilicon layer by applying a voltage between the source electrode and the drain electrode so as to heat said at least one amorphous material layer.

A method of fabricating a thin film transistor, the method comprising the steps of:

• sequentially forming a gate electrode and an insulating layer on a substrate;
• forming, on the insulating layer, a source electrode and a drain electrode, and at least one heater layer to connect the source electrode and the drain electrode;
• forming a through-hole under said at least one heater layer by etching the insulating layer;
• heating said at least one heater layer by applying a voltage between the source electrode and the drain electrode;
• depositing a polysilicon layer on the heated said at least one heater layer;
• and
• etching and removing an exposed portion of said at least one heater layer.