Highly sensitive photo-sensing element and photo-sensing device using the same
AssigneeHitachi Displays, Ltd.
InventorsMitsuharu Tai, Toshio Miyazawa
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Abstract
The present invention provides an image display unit integrated with a photo-sensor, comprising a photo-sensing element with high sensitivity and low noise and a polycrystalline silicon TFT prepared at the same time on an insulating substrate using planer process. After a first electrode 11 and a second electrode 12 of the photo-sensing element are made of polycrystalline silicon film, a light receiving layer (photoelectric conversion layer) 13 of the photo-sensing element is prepared by amorphous silicon film on upper layer. In this case, a polycrystalline silicon TFT is prepared at the same time.
Claims20
A photo-sensing element disposed on an insulating substrate, said photo-sensing element comprising a light receiving layer (photoelectric conversion layer) made of a second semiconductor layer being disposed at least between a first electrode and a second electrode, each made of a first semiconductor layer, said first semiconductor layer and said second semiconductor layer are different from each other in “phase” status or are made of semiconductor materials different from each other.
A photo-sensing device, comprising a photo-sensing element disposed on an insulating substrate and a photo-sensor driver circuit for processing the output from the photo-sensing element, wherein:
- said photo-sensing element at least comprises a light receiving layer (photoelectric conversion layer) made of a second semiconductor layer being disposed between a first electrode and a second electrode made of a first semiconductor layer, and the first semiconductor layer and the second semiconductor layer are different from each other in phase status or different from each other in semiconductor materials;
- and
- said photo-sensor driver circuit comprises a thin-film transistor, and a channel, a source electrode and a drain electrode of the thin-film transistor are made of the first semiconductor layer.
An image display unit, comprising a photo-sensor disposed on an insulating substrate, a photo-sensor driver circuit for processing sensor signal from the photo-sensor, and a peripheral pixel driver for driving a plurality of pixels in response to the sensor signal, wherein:
- said photo-sensing element at least comprises a light receiving layer (photoelectric conversion layer) made of a second semiconductor layer disposed between a first electrode and a second electrode, each made of a first semiconductor layer, and the first semiconductor layer and the second semiconductor layer are different from each other in phase status or different from each other in semiconductor materials;
- and
- said photo-sensor driver circuit comprises a thin-film transistor, and a channel, a source electrode and a drain electrode of the thin-film transistor are made of the first semiconductor layer.
Dependencies are inferred from the claim text.