Semiconductor light emitting device and its manufacture method

A semiconductor light emitting device comprising:

• a conductive substrate;
• a eutectic material layer made of eutectic material, disposed over said conductive substrate;
• a p-side conductive layer over said eutectic material layer;
• a lamination structure including an optical emission layer made of ZnO based compound semiconductor, disposed over said p-side conductive layer;
• a current diffusion layer made of n-type ZnO, disposed over said lamination structure;
• and
• an n-side electrode over a partial surface of said current diffusion layer.

A semiconductor light emitting device manufacture method comprising:

• preparing a first substrate of an n-type ZnO substrate;
• forming a lamination structure including an optical emission layer made of ZnO based compound semiconductor over said first substrate;
• forming a p-side conductive layer over said ohmic contact layer;
• preparing a second substrate;
• thereafter bonding the first substrate that is turned upside down to the second substrate such that a p-side conductive layer side of the first substrate faces the second substrate;
• and
• forming an n-side electrode over a partial area of a surface of said first substrate that is opposite to the p-side conductive layer side.

A semiconductor light emitting device comprising:

• a substrate;
• a p-side conductive layer over said substrate;
• a lamination structure including an optical emission layer made of ZnO based compound semiconductor, disposed over said p-side conductive layer;
• a current diffusion layer made of n-type ZnO, disposed over said lamination structure;
• and
• an n-side electrode over a partial surface of said current diffusion layer,
• wherein a thickness of the current diffusion layer is such that the current diffusion layer is substantially transparent with respect to an emission spectrum of said optical emission layer, and
• wherein said thickness, lateral dimensions, and a conductivity of the current diffusion layer are such that, in operation, electrons from said n-side electrode diffuse to cover a substantially entire bottom surface of said current diffusion layer so that emission occurs in a substantially entire area of said optical emission layer.