Manufacturing method of thin film transistor and thin film transistor, and display
AssigneeSony Corporation
InventorsNoriyuki Kawashima, Kazumasa Nomoto, Akihiro Nomoto
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Abstract
A manufacturing method of a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.
Claims9
A manufacturing method of a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which comprises the steps of:
- pattern coating a gate electrode material on the gate insulating film by printing, and
- carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.
A thin film transistor comprising a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, wherein
- the gate electrode is formed by heat treating a gate electrode material having been pattern coated by printing.
A display comprising:
- a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate;
- and
- a display device connected to the thin film transistor disposed and formed on a substrate, wherein
- the gate electrode is formed by heat treating a gate electrode material having been pattern coated by printing.
Dependencies are inferred from the claim text.