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US 2008/0164456 A1Published application
Resistance variable memory device and method of fabrication
AssigneeMicron Technology, Inc.
InventorKristy A. Campbell
Life of this patent
Estimating the term…
Abstract
Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.
Claims25
1-109. (canceled)
A memory device comprising:
- a combined address line and electrode structure;
- a second electrode;
- a chalcogenide glass material between the combined address line and electrode structure and the second electrode;
- a tin-chalcogenide material between the chalcogenide glass material and the second electrode;
- and
- a metal-containing material between the combined address line and electrode structure and the second electrode.
3 more elements
A memory device comprising:
- a combined address line and electrode structure blanket layer;
- a second electrode;
- a chalcogenide glass blanket layer between the combined address line and electrode structure blanket layer and the second electrode;
- and
- a tin-chalcogenide blanket layer between the chalcogenide glass blanket layer and the second electrode.
2 more elements
A resistance variable memory device comprising:
- a first electrode;
- a second electrode;
- a chalcogenide glass region between the first electrode and the second electrode;
- a tin-chalcogenide region between the chalcogenide glass region and the second electrode;
- an alloy-control region between the chalcogenide glass region and the second electrode.
2 more elements
A resistance variable memory device comprising:
- a first electrode;
- a second electrode;
- a first chalcogenide glass region between the first electrode and the second electrode;
- a second chalcogenide glass region between the first electrode and the second electrode;
- a tin-chalcogenide region between the first chalcogenide glass region and the second electrode;
- and
- a metal-containing region between the first electrode and the second electrode.
4 more elements
Dependencies are inferred from the claim text.