Programmable Non-Volatile Resistance Switching Device

An interconnected memory cell element comprising an interconnected memory cell micro-electronic device having a first number of electrodes and a second number of electrically conducting programmable resistance channels forming interconnecting programmable resistance paths between the electrodes for interface resistive switching, each one of said programmable resistance channels connecting one of said electrodes to another one of said electrodes wherein said device has programmable resistance channels formed between pairs of electrodes opposed to each other in the manner of capacitors and said device has a conducting programmable resistance channel between two electrodes arranged side by side for interconnection in said interconnected memory cell, the programmable resistance channels exhibiting an electrical programmable resistance that is reversibly switchable between different states for interface resistive switching, wherein the first number is larger than two and the second number is larger than the first number divided by two, and said electrodes are provided adjacent a transition metal oxide material and interconnected thereby, said transition metal oxide material forming part of said electrically conducting programmable resistance channels providing interface resistive switching due to the electronic state of the transition metal oxide material in the interface of the programmable resistance channels between the electrodes and said transition metal oxide.