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AssigneeAxcelis Technologies, Inc.
InventorsYongzhang Huang, Que Weiguo, Zhang Jincheng
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The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a,high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.
A beam control circuit for an ion implantation system comprising:
A beam control circuit for minimizing particle contamination in an ion implantation system comprising:
A method of reducing the duty factor of an ion beam to minimize particle contamination in an ion implantation system utilizing a beam control circuit comprising a switch controller and a high-voltage switch connected between a voltage supply and an electrode associated with an ion source of the ion implantation system, the method comprising:
Dependencies are inferred from the claim text.