Diamond Enhanced Thickness Shear Mode Resonator
AssigneesInteruniversitair Microelektronica Centrum (IMEC), University Hasselt
InventorOliver Williams
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Abstract
A thickness shear mode (TSM) resonator is described, comprising a diamond layer. The diamond layer is preferably a high quality diamond layer with at least 90% sp3 bonding or diamond bonding. A method for manufacturing such a resonator is also described. The thickness shear mode resonator according to embodiments described herein may advantageously be used in biosensor application and in electrochemistry applications.
Claims24
A thickness shear mode resonator comprising:
- a high temperature piezoelectric crystal having a first major surface,
- at least one interlayer on the first major surface of the high temperature piezoelectric crystal, including at least a first interlayer part being adapted for functioning as a first electrode, and at least a second interlayer part being adapted for allowing growth of a high quality diamond layer comprising at least 90% sp3 bonding, and
- a high quality diamond layer on at least part of the at least one interlayer, the diamond layer comprising at least 90% sp3 bonding.
A thickness shear mode resonator according to claim 9, wherein the high temperature piezoelectric crystal comprises one of La3Ga5SiO14, La3Ga5.5Ta0.5O14, GaPO4, Li2B4O7, AlN, GaN, Al1-xGaxN with 0≦x≦1, AlPO4, Bi4Ti3O12, Bi3TiNbOg, Sr2Nb2O7, Ca2Ga2Ge4SiO14, or a material having the same crystalline structure as Ca2Ga2Ge4SiO14.
A method of manufacturing a thickness shear mode resonator, the method comprising:
- providing a high temperature piezoelectric crystal having a first major surface,
- providing at least one interlayer on the first major surface of the high temperature piezoelectric crystal, including at least a first interlayer part adapted for functioning as a first electrode, and including at least a second interlayer part adapted for allowing growth of a high quality diamond layer comprising at least 90% sp3 bonding, and
- providing a high quality diamond layer on at least part of the upper interlayer, the diamond layer comprising at least 90% sp3 bonding.
Dependencies are inferred from the claim text.