Method of forming low-k dielectric layer and structure thereof
OwnerJong Taek Hwanginventor
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Abstract
A method of forming a low-k dielectric layer and structure thereof are disclosed. The present invention forms a BSG layer containing fluorine as an insulating interlayer beneath an FSG layer to enable the BSG layer to capture fluorine diffusing from the FSG layer. Accordingly, the present invention is able to effectively prevent such a problem as a dielectric constant increase of a lower insulating interlayer due to fluorine diffusion, signal transfer characteristic degradation, poor adhesion between the lower insulating interlayer and a barrier metal layer, delamination due to the poor adhesion, and the like.
Claims19
A method comprising:
- depositing a first lower insulating interlayer over a substrate;
- depositing a second lower insulating interlayer containing a p-type dopant over the first lower insulating interlayer;
- forming a first copper interconnect extending through the first lower insulating interlayer and the second lower insulating interlayer;
- depositing a capping layer over the second lower insulating interlayer;
- forming an upper insulating interlayer containing fluorine over the capping layer;
- and then
- forming a second metal interconnect extending through the upper insulating interlayer.
An apparatus comprising:
- a first lower insulating interlayer formed over a substrate;
- a second lower insulating interlayer containing a p-type dopant formed over the first lower insulating interlayer;
- a first metal interconnect formed extending through the first lower insulating interlayer and the second lower insulating interlayer;
- a capping layer formed over the second lower insulating interlayer;
- an upper insulating interlayer containing fluorine formed over the capping layer;
- and
- a second metal interconnect formed extending through the upper insulating interlayer and in connection with the first metal interconnect.
A method comprising:
- forming a lower insulating interlayer over a substrate;
- forming a first barrier metal layer and a first metal interconnect each extending through the lower insulating interlayer by conducting a first dual damascene process on the lower insulating interlayer;
- forming a capping layer over the lower insulating interlayer;
- forming an upper insulating interlayer over the capping layer;
- and then
- forming a second barrier metal layer and a second metal interconnect each extending through the upper insulating interlayer by conducting a second dual damascene process on the upper insulating interlayer,
- wherein the second barrier metal is connected to the first barrier metal and the second metal interconnect is connected to the first metal interconnect.
Dependencies are inferred from the claim text.