Semiconductor Device and Method for Manufacturing the Same
OwnerJong Bok Leeinventor
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Abstract
A semiconductor device and method for manufacturing the same are disclosed. A semiconductor device according to an embodiment comprises an interlayer insulating layer including a lower conductor wiring layer and a via hole exposing the lower conductor wiring layer, a conductor material filled inside the via hole, and an upper conductor wiring layer electrically connected to the lower conductor wiring layer through the conductor material filled inside the via hole. A barrier layer for inhibiting a loss of the conductor material filled inside the via hole is formed with a portion filling the upper portion of the via hole, and the upper conductor wiring layer is formed on the barrier layer.
Claims20
A method for manufacturing a semiconductor device, comprising:
- depositing a metal layer on an interlayer insulating layer in a via hole above a lower metal wiring;
- performing a chemical mechanical polishing process such that the metal layer remains only within the via hole;
- etching back an upper portion of the metal layer in the via hole;
- forming a first barrier layer on the interlayer insulating layer including on the etched back metal layer in the via hole;
- forming an upper metal wiring layer on the first barrier layer;
- and
- performing an etching process to form an upper metal wiring.
A semiconductor device, comprising:
- an interlayer insulating layer including a via hole exposing a lower metal wiring layer;
- tungsten filled inside the via hole, wherein the top surface of the tungsten is below the top surface of the via hole;
- a first barrier layer on the tungsten and a portion of the interlayer insulating layer, wherein the first barrier layer fills a top portion of the via hole;
- and
- an upper metal wiring layer on the first barrier layer.
Dependencies are inferred from the claim text.