Semiconductor device having a metal interconnection and method of fabricating the same
AssigneeDongbu HiTek Co., Ltd.
InventorHan Choon Lee
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Abstract
Disclosed are a semiconductor device and a method for fabricating a metal interconnection of a semiconductor device. The method includes the steps of forming a dielectric layer on a semiconductor substrate including a lower interconnection, forming a trench in the interlayer dielectric layer that exposes the lower interconnection, forming a diffusion barrier in the trench and on the interlayer dielectric layer, forming a copper seed layer on the diffusion barrier, implanting a metal dopant into the copper seed layer, forming a copper metal interconnection on the copper seed layer into which the metal dopant is implanted, and forming an alloy layer from the copper seed layer and the metal dopant.
Claims15
A method for fabricating a metal interconnection, comprising the steps of:
- forming a dielectric layer on a semiconductor substrate, including a lower interconnection;
- forming a trench in the dielectric layer that exposes the lower interconnection;
- forming a diffusion barrier in the trench on the dielectric layer;
- forming a copper seed layer on the diffusion barrier;
- implanting a metal dopant into the copper seed layer;
- forming a copper metal interconnection on the copper seed layer into which the metal dopants are implanted;
- and
- forming an alloy layer from the copper seed layer and the metal dopant.
A semiconductor device having a metal interconnection, comprising:
- a dielectric layer on a semiconductor substrate including a lower interconnection;
- a trench in the dielectric layer;
- a diffusion barrier in the trench and on the interlayer dielectric layer;
- an alloy layer on the diffusion barrier;
- and
- a copper interconnection on the alloy layer.
Dependencies are inferred from the claim text.