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US 2008/0157372 A1Published application
Metal Line of Semiconductor Device and Manufacturing Method Thereof
OwnerSung Joong Joo, Han Choon Leeinventors
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Abstract
Provided is a method for forming a metal line of a semiconductor device. A trench is formed in an interlayer insulating layer formed on a semiconductor substrate. Copper is deposited in the trench to form a copper metal line, and a diffusion barrier layer is formed on the interlayer insulating layer and the copper metal line. A metal pad is formed on the diffusion barrier layer. In one embodiment, the diffusion barrier layer is formed of three layers, including TiSiN layers.
Claims12
A method for forming a metal line of a semiconductor device, the method comprising:
- forming a trench in an interlayer insulating layer formed on a semiconductor substrate;
- forming a copper metal line in the trench;
- forming a diffusion barrier layer including at least one barrier layer on the interlayer insulating layer and the copper metal line;
- and
- forming a metal pad on the diffusion barrier layer.
2 more elements
A metal line of a semiconductor device comprising:
- a semiconductor substrate including an interlayer insulating layer;
- a trench formed in the interlayer insulating layer;
- a copper metal line formed in the trench;
- a diffusion barrier layer formed on the copper metal line;
- and
- a metal pad formed on the diffusion barrier layer,
- wherein the diffusion barrier layer includes a TiN layer and at least one TiSiN layer formed on the TiN layer.
4 more elements
Dependencies are inferred from the claim text.