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US 2008/0157367 A1Published application
Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the same
OwnerSoo Hyun KIM, Baek Mann KIM +3inventors
InventorsSoo Hyun KIM, Baek Mann KIM, Young Jin LEE, Dong Ha JUNG, Jeong Tae KIM
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Abstract
A multi-layer metal wiring of a semiconductor device and a method for forming the same are disclosed. The multi-layer metal wiring of the semiconductor device includes a lower Cu wiring, and an upper Al wiring formed to be contacted with the lower Cu wiring, and a diffusion barrier layer interposed between the lower Cu wiring and the upper Al wiring. The diffusion barrier layer is formed of a W-based layer.
Claims36
A multi-layer metal wiring of a semiconductor device comprising:
- a lower Cu wiring;
- an upper Al wiring formed over the lower Cu wiring and electrically contacting the lower Cu wiring;
- and
- a W-based diffusion barrier layer formed between the lower Cu wiring and the upper Al wiring.
1 more element
A method for forming a multi-layer metal wiring of a semiconductor device including:
- forming a lower Cu wiring over a semiconductor substrate;
- forming a w-based diffusion barrier layer on the lower Cu wiring;
- and forming an upper Al wiring over the lower Cu wiring including the W-based diffusion barrier layer.
Dependencies are inferred from the claim text.