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US 2008/0157366 A1Published application
Semiconductor device and fabricating method thereof
OwnerJi-Won Hyuninventor
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Abstract
A semiconductor device and fabricating method thereof are disclosed. Embodiments relate to forming metal lines having a prescribed pattern over a lower insulating interlayer, forming a silicon oxide layer over surfaces of the metal lines and a surface of the lower insulating interlayer exposed between the metal lines, and forming an upper insulating interlayer over the silicon oxide layer.
Claims20
A method comprising:
- forming metal lines having a prescribed pattern over a lower insulating interlayer;
- forming a silicon oxide layer over surfaces of the metal lines and surfaces of the lower insulating interlayer exposed between the metal lines;
- and
- forming an upper insulating interlayer over the silicon oxide layer.
1 more element
A semiconductor device, comprising:
- metal lines having a prescribed pattern over a lower insulating interlayer;
- a silicon oxide layer formed over surfaces of the metal lines and a surface of the lower insulating interlayer exposed between the metal lines;
- and
- an upper insulating interlayer formed over the silicon oxide layer.
1 more element
An apparatus comprising:
- metal lines formed having a prescribed pattern over a lower insulating interlayer;
- a silicon oxide layer formed over surfaces of the metal lines and surfaces of the lower insulating interlayer exposed between the metal lines;
- and
- an upper insulating interlayer formed over the silicon oxide layer.
1 more element
Dependencies are inferred from the claim text.