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US 2008/0157365 A1Published application
Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor
AssigneeIntel Corporation
InventorsAndrew Ott, Sean King, Ajay Sharma
Life of this patent
Estimating the term…
Abstract
In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An insulating layer may be over the etch stop layer. A conductive structure may be included through the insulating layer to the metal gate. Methods of making such transistors are also disclosed.
Claims15
An apparatus comprising:
- a metal gate of a transistor;
- an etch stop layer selectively over the metal gate, wherein the etch stop layer comprises a metal compound;
- an insulating layer over the etch stop layer;
- a conductive structure through the insulating layer to the metal gate.
1 more element
12-20. (canceled)
An apparatus comprising:
- a metal gate of a transistor;
- an etch stop layer directly on the metal gate, wherein the etch stop layer comprises an oxide of a metal, a nitride of a metal, a carbide of a metal, or a combination thereof.
Dependencies are inferred from the claim text.