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US 2008/0157363 A1Published application
Method of forming the nanoscale conductive structure and a semiconductor device formed thereby
AssigneeSamsung Electronics Co., Ltd.
InventorsSubramanya Mayya Kolake, Sun-Woo Lee, In-Seok Yeo
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Abstract
A method of forming a nanoscale structure includes providing a substrate having a first layer thereon, the first layer having an opening that exposes a region of the substrate, and contacting the substrate with a catalytic material, wherein the exposed region of the substrate has a first property that attracts the catalytic material, and the first layer has a second property that repels the catalytic material.
Claims25
A method of forming a nanoscale structure, comprising:
- providing a substrate having a first layer thereon, the first layer having an opening that exposes a region of the substrate;
- and
- contacting the substrate with a catalytic material, wherein:
- the exposed region of the substrate has a first property that attracts the catalytic material, and
- the first layer has a second property that repels the catalytic material.
2 more elements
A semiconductor device, comprising:
- a substrate;
- an insulating layer having an opening, the opening exposing a portion of the substrate;
- a hydrophobic layer on a sidewall and a top surface of the insulating layer;
- and
- a nanoscale conductive structure on the exposed portion of the substrate.
2 more elements
Dependencies are inferred from the claim text.