Semiconductor components having through interconnects and methods of fabrication

A semiconductor component comprising:

• a first substrate having a first side, a second side, a substrate contact on the first side having an inner surface, and at least one integrated circuit in electrical communication with the substrate contact;
• a second substrate on the first substrate having a back side;
• and
• a through interconnect comprising an opening in the second side of the first substrate to the inner surface of the substrate contact, a projection on the second substrate in the opening, a conductive via through the projection and the second substrate, and a contact on the projection in electrical contact with the conductive via and the inner surface of the substrate contact.

A semiconductor component comprising:

• a first substrate having a circuit side, a back side, a plurality of integrated circuits, and a plurality of substrate contacts on the circuit side in electrical communication with the integrated circuits;
• a second substrate attached to the back side of the first substrate;
• and
• a plurality of through interconnects comprising openings in the back side of the first substrate to the substrate contacts, projections on the second semiconductor substrate in the openings, and conductive vias through the projections and the second substrate in electrical contact with the substrate contacts,
• the projections and the openings having matching sizes and shapes configured for mating physical engagement.

A semiconductor component comprising:

• a semiconductor substrate having a circuit side, a back side, an integrated circuit, a substrate contact on the circuit side in electrical communication with the integrated circuit, and a substrate opening extending from the back side to an inner surface of the substrate contact;
• an interposer substrate attached to the back side of the semiconductor substrate having a projection in the substrate opening proximate to the inner surface of the substrate contact, and a conductive via in the projection comprising a wire having a bonded connection with the substrate contact;
• and
• a terminal contact on the interposer substrate in electrical communication with the conductive via.

A semiconductor component comprising:

• a semiconductor substrate having a first side, a second side, an integrated circuit, a substrate contact on the first side in electrical communication with the integrated circuit, and a substrate opening extending from the second side to an inner surface of the substrate contact;
• a projection on the second side;
• and
• a conductive via on the semiconductor substrate comprising a metal layer in the substrate opening in electrical contact with the inner surface of the substrate contact and at least partially covering a tip portion of the projection.

A method for fabricating a semiconductor component comprising:

• providing a first substrate having a first side, a second side, and a substrate contact on the first side;
• forming an opening from the second side to the substrate contact;
• providing a second substrate;
• forming a projection on the second substrate and a conductive via in the projection;
• and
• placing the second substrate on the second side of the first substrate with the projection in the opening and the conductive via in electrical contact with the substrate contact.

A method for fabricating a semiconductor component comprising:

• providing a first substrate having integrated circuits and substrate contacts in electrical communication with the integrated circuits;
• forming openings from a backside of the substrate aligned with the substrate contacts;
• forming a plurality of projections on a second substrate and conductive vias in the projections;
• placing the projections into the openings;
• and
• placing the conductive vias in electrical contact with the substrate contacts.

A method for fabricating a semiconductor component comprising:

• providing a first substrate having a circuit side, a back side, a plurality of integrated circuits, and a plurality of substrate contacts on the circuit side in electrical communication with the integrated circuits;
• providing a second substrate;
• forming openings in the back side of the first substrate to the substrate contacts;
• forming projections on the second semiconductor substrate, the projections and the openings having matching sizes and shapes configured for mating physical engagement;
• forming conductive vias through the projections;
• and
• placing the projections in physical contact with the openings and the conductive vias in electrical contact with the substrate contacts.

A method for fabricating a semiconductor component comprising:

• providing a first substrate having a circuit side, a back side, an integrated circuit, a substrate contact on the circuit side in electrical communication with the integrated circuit;
• etching a substrate opening in the back side to an inner surface of the substrate contact;
• providing a second substrate;
• etching a projection on the second substrate configured for mating physical engagement with the opening;
• forming a conductive via through the projection and the second substrate having a contact on projection;
• placing the projection in the opening;
• and
• bonding the contact to the substrate contact.

A method for fabricating a semiconductor component comprising:

• providing a semiconductor wafer comprising a plurality of first semiconductor substrates having a plurality of substrate contacts and openings aligned with the substrate contacts;
• providing a plurality of second semiconductor substrates having a plurality of projections and through interconnects in the projections;
• placing the second semiconductor substrates on the semiconductor wafer with the projections in the openings, the through interconnects in electrical contact with the substrate contacts, and spaces between the second semiconductor substrates and between the second semiconductor substrates and the semiconductor wafer;
• filling the spaces with a first polymer material;
• forming grooves in the semiconductor wafer;
• encapsulating the second semiconductor substrates and filling the grooves with a second polymer material;
• and
• singulating the semiconductor wafer through the grooves.

A system comprising:

• a first semiconductor substrate having a first side, a second side, a plurality of substrate contacts on the first side, and a plurality of first integrated circuits in electrical communication with the substrate contacts;
• a second semiconductor substrate attached to the first substrate having a plurality of second integrated circuits;
• a plurality of through interconnects comprising openings in the second side of the first semiconductor substrate to the substrate contacts, projections on the second substrate physically engaging the openings, and conductive vias in the projections in electrical communication with the second integrated circuits and in electrical contact with the substrate contacts;
• and
• a plurality of terminal contacts on the first semiconductor substrate or on the second semiconductor substrate in electrical communication with the through interconnects.