Methods of forming stepped bumps and structures formed thereby
AssigneeIntel Corporation
InventorsAndrew Yeohi, Guotao Wang, Sairam Agraharam, Sudarshan Rangaraj
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Abstract
Methods of forming a microelectronic device and associated structures are described. Those methods may comprise forming a die-side conductive interconnect on a substrate, wherein the die-side conductive interconnect comprises a columnar portion and a base portion, and wherein a diameter of the base portion is greater than a diameter of the columnar portion.
Claims25
A method comprising:
- forming a die-side conductive interconnect structure on a portion of a die, wherein the die-side conductive interconnect structure comprises a columnar portion and a base portion, and wherein a diameter of the base portion is greater than the diameter of the columnar portion.
The method of claim 9 further comprising wherein the device interconnect layer comprises a multilayer dielectric stack.
A method of forming a die-side conductive interconnect comprising:
- forming a die-side conductive interconnect on a substrate, wherein the die-side conductive interconnect comprises a base potion and a columnar portion;
- and
- coupling the columnar portion of the die-side conductive interconnect to a solder bump disposed on a package substrate.
A structure comprising:
- a die-side conductive interconnect disposed on a substrate, wherein the die-side conductive interconnect comprises a columnar portion and a base portion, and wherein a diameter of the base portion is greater than a diameter of the columnar portion;
- and
- a solder bump disposed on a package substrate, wherein the solder bump is coupled with the columnar portion of the conductive interconnect.
Dependencies are inferred from the claim text.