Multi-chips package and method of forming the same

A structure of multi-chips package, comprising:

• a substrate with at least two dice receiving cavities formed within an upper surface of said substrate to receive at least two dice and through hole structures formed there through, wherein wiring circuits with terminal pads are formed under said through hole structures;
• a first die and a second die disposed within said at least two die receiving cavities, respectively;
• a first dielectric layer formed on said first die, said second die and said substrate;
• a first re-distribution conductive layer (RDL) formed on said first dielectric layer, wherein said first RDL is coupled to said first die, said second die and said terminal pads through said through hole structure;
• a second dielectric layer formed over said first RDL.
• a third die;
• a third dielectric layer formed under said third die;
• a second re-distribution conductive layer (RDL) formed under said third dielectric layer, wherein said second RDL is coupled to said third die;
• a fourth dielectric layer formed under said second RDL;
• and
• conductive bumps formed between said first die and said third die to couple said first RDL and said second RDL.

A method for forming semiconductor device package, comprising:

• providing a substrate with a die receiving cavity formed within an upper surface of said substrate and a through hole structure formed there through, wherein wiring circuit with terminal pads are formed under said through hole;
• redistributing at least one first die on a tool with a desired pitch using a pick and place fine alignment system;
• attaching adhesive material on said at least first die back side;
• bonding said substrate to said die back side, and said die disposed on said cavity of said substrate, and separating said tool to form panel wafer;
• coating a first dielectric layer on at least said first die and said substrate, and filling into the gap between said die edge and side wall of said cavity;
• forming a first RDL on said first dielectric layer;
• forming a second dielectric layer over said first RDL to expose first contact pads;
• providing a second die;
• forming a third dielectric layer under said second die;
• forming a second RDL under said third dielectric layer;
• forming a forth dielectric layer under said second RDL to protect said second RDL to expose second contact pads;
• and
• forming conductive bumps between said first die and said second die to couple said first contact pads of said first RDL and said second contact pads of said second RDL.