Semiconductor device and fabrication method thereof
AssigneeDongbu HiTek Co., Ltd.
InventorJong Taek Hwang
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Abstract
A semiconductor device including a first insulating layer having a hydroxyl radical formed over a semiconductor substrate; a line layer having a plurality of line patterns formed over the first insulating layer, the plurality if line patterns being arranged such that a spatial gap is provided therebetween; a fluorine-doped second insulating layer formed in the spatial gap between respective line patterns; and a multilayered diffusion prevention layer including a first oxide layer for suppressing an increase of a dielectric constant between the plurality of line patterns and a second oxide layer for preventing the diffusion of fluorine from the fluorine-doped second insulating layer into the first insulating layer.
Claims20
An apparatus comprising:
- a first insulating layer formed over a semiconductor substrate;
- a diffusion prevention layer formed over the first insulating layer;
- and
- a second insulating layer formed over the diffusion preventing layer,
- wherein the second insulating layer is doped with fluorine.
A method comprising:
- forming a first insulating layer over a semiconductor substrate;
- forming a diffusion prevention layer over the first insulating layer;
- and then
- forming a second insulating layer over the diffusion prevention layer,
- wherein the second insulating layer is doped with fluorine.
An apparatus comprising:
- a first insulating layer having a hydroxyl radical formed over a semiconductor substrate;
- a line layer having a plurality of line patterns formed over the first insulating layer, wherein the plurality if line patterns are arranged such that a spatial gap is provided between respective line patterns;
- a fluorine-doped second insulating layer formed in the spatial gap between respective line patterns;
- and
- a multilayered diffusion prevention layer including a first oxide layer for suppressing an increase of a dielectric constant between the plurality of line patterns and a second oxide layer for preventing the diffusion of fluorine from the fluorine-doped second insulating layer into the first insulating layer.
Dependencies are inferred from the claim text.