Nitride semiconductor substrate and method of making same

Abstract

A method of making a nitride semiconductor substrate having the steps of providing a free-standing substrate that is of a nitride semiconductor and has one of a penetrating pit and a penetrating crack that penetrate from a top surface to a back surface of the free-standing substrate, attaching a metal to the penetrating pit or the penetrating crack, the metal being adapted to be nitrided, and nitriding the metal to form a nitride that seals the penetrating pit or the penetrating crack. A nitride semiconductor substrate has a free-standing substrate that is formed of a nitride semiconductor and has one of a penetrating pit and a penetrating crack that penetrate from a top surface to a back surface of the free-standing substrate, and a metal nitride that seals the penetrating pit or the penetrating crack. The metal nitride is formed of GaN, InN and AlN.

Dependencies are inferred from the claim text.