Semiconductor device having antifuse and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKazumasa SUZUKI
Life of this patent
Estimating the term…
Abstract
A semiconductor device has a semiconductor substrate, an insulating layer formed on the semiconductor substrate, a wiring formed in the insulating layer and an antifuse including first and second connecting portions coupled to the wiring. The anti fuse has a space provided between the first connecting portion and the second connecting portion and insulating the first connecting portion from the second connecting portion. The first connecting portion and the second connecting portion may be coupled by a conductive material disposed in the space.
Claims18
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer formed on the semiconductor substrate;
- a wiring formed in the insulating layer;
- and
- an antifuse including first and second connecting portions coupled to the wiring and having an space between the first connecting portion and the second connecting portion, the space having a width for insulating the first connecting portion from the second connecting portion, the first connecting portion and the second connecting portion configured to be coupled by a conductive material disposed in the space.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer formed on the semiconductor substrate;
- a wiring formed in the insulating layer,
- a first antifuse including a first connecting portion and a second connecting portion coupled to the wiring, the first connecting portion and the second connecting portion coupled by a conductive material;
- and
- a second antifuse including a third connecting portion and a fourth connecting portion coupled to the wiring, the second antifuse having a space between the third connecting portion and the fourth connecting portion, the space having a width insulating the third connecting portion from the fourth connecting portion.
A method of fabricating a semiconductor device comprising:
- preparing a semiconductor substrate, an insulating layer formed on the semiconductor substrate, a wiring formed in the insulating layer, and an antifuse including a first connecting portion and the second connecting portion, separated by a space, the space having a width insulating the first connecting portion from the second connecting portion;
- and
- disposing a conductive material in the space between the first connecting portion and the second connecting portion.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer formed on the semiconductor substrate;
- a wiring formed in the insulating layer,
- a first antifuse including first and second connecting portions coupled to the wiring by a conductive material;
- and
- a second antifuse including third and fourth connecting portions coupled to the wiring, the second antifuse having an space between the third connecting portion and the fourth connecting portion, the space having a width insulating the third connecting portion from the fourth connecting portion,
- wherein the conductive material is a ball bump,
- wherein the first antifuse is coupled to a normal circuit and
- wherein the second antifuse is coupled to a defective circuit.
Dependencies are inferred from the claim text.